Gate-All-Around FET (GAAFET) Market Size, Share, Analysis, Trends, Growth, 2032

Gate-All-Around FET (GAAFET) Market

Gate-All-Around FET (GAAFET) Market By Application (Inverters & UPS, Consumer Electronics, Industrial Systems, and Others), By Type (2nm and 3nm), and By Region - Global and Regional Industry Overview, Market Intelligence, Comprehensive Analysis, Historical Data, and Forecasts 2024 – 2032

Category: Semiconductor & Electronics Report Format : PDF Pages: 231 Report Code: ZMR-8318 Published Date: May-2024 Status : Published
Market Size in 2023 Market Forecast in 2032 CAGR (in %) Base Year
USD 48.64 Million USD 433.1 Million 27.50% 2023

Gate-All-Around FET (GAAFET) Market

Gate-All-Around FET (GAAFET) Industry Prospective:

The global gate-all-around FET(GAAFET) market size was worth around USD 48.64 million in 2023 and is predicted to grow to around USD 433.1 million by 2032 with a compound annual growth rate (CAGR) of roughly 27.50% between 2024 and 2032.

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Gate-All-Around FET (GAAFET) Market: Overview

Gate-all-around field effect transistors (GAAFET) are being hailed as the ultimate complementary metal-oxide-semiconductor (CMOS) in the electrostatics sector by industry experts. This type of transistor structure has gates across all sides of the channel. In simple terms, GAAFET is a silicon nanowire surrounded by gates from all sides. One of the main advantages of gate-all-around FET is improved channel width which is achieved due to the planar channels stacking vertically.

This further enhances the current carrying capacity of the device along with improved power and reduced energy consumption. GAAFET is considered the next-generation model of FinFET. Owing to the small size of gate-all-around FET, they are highly scalable in terms of production and can be used in all modern miniaturized electronic products. However, even though they offer significant advantages, the production of GAAFET is challenged by the complexities of developing the nanoscale structures in 3 dimensions. The first GAAFET was first practically demonstrated in 1988 and since then it has managed to gain the interest of several players from across the globe. Currently, multiple large-scale semiconductor manufacturing companies are investing in scaling the production of GAAFET.

Key Insights:

  • As per the analysis shared by our research analyst, the global gate-all-around FET(GAAFET) market is estimated to grow annually at a CAGR of around 27.50% over the forecast period (2024-2032)
  • In terms of revenue, the global gate-all-around FET(GAAFET) market size was valued at around USD 48.64 million in 2023 and is projected to reach USD 433.1 million, by 2032.
  • The market is projected to grow at a significant rate due to the rising sale of consumer electronics
  • Based on the application, the consumer electronics segment is growing at a high rate and will continue to dominate the global market as per industry projection
  • Based on the type, the 3 nm segment is anticipated to command the largest market share
  • Based on region, Asia-Pacific is projected to dominate the global market during the forecast period

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Gate-All-Around FET (GAAFET) Market: Growth Drivers

Rising sales of consumer electronics will drive the market demand during the projection period

The global gate-all-around FET (GAAFET) market will be driven by the increasing sale of consumer electronics across the globe. The highly efficient transistors are used in several types of modern consumer electronics including products such as computers, televisions, and smartphones. These technologies rely heavily on high-performance semiconductors and GAAFET for the desired output. Gate-all-around FETs deliver higher energy efficiency which is currently one of the major selling points for all forms of consumer electronics, especially smartphones. The key parameters driving GAAFET performance are reduced rate of off-state leakage currents, faster speed of switching, and higher drive currents resulting in improved user experience.

The world population is growing rapidly. In addition to this, consumers are demanding electronic items that match or exceed expectations. For instance, modern customers who rely heavily on smartphones are seeking products that have long-lasting battery life and can allow the use of heavy applications with ease. This can be achieved using GAAFET. Furthermore, the rising sale of consumer electronics through online sales mode has resulted in a considerable increase in the consumer base in the last decade. As per official reports, more than 40% of the world’s population prefers buying smartphones online since this mode of transaction offers several advantages. Some of them are ease of purchase, higher discounts, incentives, and better flexibility in terms of payment options.

Rising investments in advanced technologies such as 5G communications and Internet of Things (IoT) could aid higher market revenue

Gate-all-around FET (GAAFET) is the most recent development of the fabrication technology. Engineers have better control over the width and number of the nanosheets used in the production of GAAFET making the final devices more efficient. The rising investments in 5G communication systems and other forms of advanced technology such as the Internet of Things, artificial intelligence (AI), and machine learning (ML) can be enabled using GAAFET-powered devices. As investments in modern systems are on the rise, the global gate-all-around FET (GAAFET) market will flourish.

Gate-All-Around FET (GAAFET) Market: Restraints

Nascent stage of the technology will restrict the market expansion rate

The global industry for gate-all-around FET (GAAFET) is expected to be restricted due to the limited research and development in the GAAFET technology. As compared to conventionally used field effect transistors, gate-all-around solutions are in the nascent stage of development and require more extensive work to flourish. The change from FINFET technology to GAAFET will be steady since high-scale manufacturing of the latter form will require extensive investments as FINFET systems enjoy considerable market share.

Gate-All-Around FET (GAAFET) Market: Opportunities

Growing demand for electric vehicles will generate high-growth opportunities

The global gate-all-around FET (GAAFET) market is projected to come across novel growth opportunities during the projection period. The industry can gain significantly from the growing investments in the electric vehicle (EV) sector. GAAFETs are used for the production of modern systems used in electric vehicles including battery management systems, power electronics, vehicle control & communication systems, on-boarding charging systems, and others. Electric vehicles are becoming widely popular across public and private mediums. For instance, regional governments are encouraging the production of commercial-grade electric buses and vans. In April 2024, BasiGo, a Kenyan electric bus solutions provider, announced that it secured funding worth USD 3 million from CFAO Group. The company will use the funds to scale up the production of electric buses across Rwanda and Kenya. Additionally, the same month also witnessed the announcement of the addition of 200 more electric buses on Kenyan roads by 2026. The announcement was after the partnership between Country Bus Service (CBS) and Roam. The former is a leading public transport service provider.

Higher investments in renewable energy production may prove beneficial for the market

Renewable energy is the only way forward for the global energy and power market since the effects of overconsumption of natural resources for energy generation have become widely apparent in the form of increasing air pollution, rising temperatures, and changing weather conditions. More countries and business organizations are focusing on reducing net carbon emissions. This can be achieved by incorporating renewable energy solutions such as solar, wind, and hydropower. The equipment used for harnessing these energies will be powered by the highly efficient products available in the global gate-all-around FET (GAAFET) market. In 2023, the global renewable energy market crossed the USD 1 trillion mark.

Gate-All-Around FET (GAAFET) Market: Challenges

Lack of standardization policies in the semiconductor industry will challenge the market expansion rate

The global industry for gate-all-around FET (GAAFET) industry will be challenged by the lack of standardization policies in the semiconductor fabrication sector. This leads to varying quality of products being distributed in the market. In addition to this, GAAFET systems may face complexities during integration with existing semiconductor production, designing, and distribution ecosystems. The growing competitiveness in the GAAFET sector could lead to price wars.

Gate-All-Around FET (GAAFET) Market: Segmentation

The global gate-all-around FET(GAAFET) market is segmented based on application, type, and region.

Based on the application, the global market segments are inverters & UPS, consumer electronics, industrial systems, and others. In 2023, the highest demand was observed in the consumer electronics segment. In 2024, it is expected to dominate over 43.2% of the total segmental share and may grow at a CAGR of over 38% during the projection period. The growing trend of consumer electronics miniaturization along with higher competitiveness in the industry will lead to improved segmental demand.

Based on the type, the global market divisions are 2nm and 3 nm. In 2023, the highest market share was held by the 3 nm segment. More than 75% of the segmental share will be led by 3nm and the CAGR projections are close to 33.2%. The 2nm segment will grow at a CAGR of around 28.25% during the forecast period. The higher performance value offered by GAAFET along with increased research & development (R&D) in further improvements will help the industry flourish.

Gate-All-Around FET (GAAFET) Market Report Scope

Report Attributes Report Details
Report Name Gate-All-Around FET (GAAFET) Market
Market Size in 2023 USD 48.64 Million
Market Forecast in 2032 USD 433.1 Million
Growth Rate CAGR of 27.50%
Number of Pages 231
Key Companies Covered Nvidia, NXP Semiconductors, GlobalFoundries, Intel Corporation, ASML Holding NV, Micron Technology, Taiwan Semiconductor Manufacturing Company (TSMC), Texas Instruments, Applied Materials, Qualcomm, SK Hynix, IBM, Advanced Micro Devices (AMD), Samsung Electronics, Broadcom Inc., and others.
Segments Covered By Application, By Type, and By Region
Regions Covered North America, Europe, Asia Pacific (APAC), Latin America, Middle East, and Africa (MEA)
Base Year 2023
Historical Year 2018 to 2022
Forecast Year 2024 - 2032
Customization Scope Avail customized purchase options to meet your exact research needs. Request For Customization

Gate-All-Around FET (GAAFET) Market: Regional Analysis

Asia-Pacific to generate the highest revenue during the forecast period

The global gate-all-around FET (GAAFET) market is expected to be led by Asia-Pacific during the projection period. Asia-Pacific is home to some of the largest producers and exporters of semiconductors. Countries such as China and Taiwan lead the global semiconductor fabrication industry, the latter producing more than 90% of all advanced chips across the globe. In addition to this, Asian countries are constantly investing in upgrading the semiconductor fabrication sector with high investments in R&D. The presence of crucial players operating in the GAAFET sector in Asia-Pacific promotes the regional market growth rate.

In January 2020, Samsung, a leading producer of consumer electronics based in South Korea, commenced the production of 3nm GAAFET making it the first company in the world to do so. As per the latest reports, the Taiwan Semiconductor Manufacturing Co aims to deliver tough competition to Samsung by investing in the development of 2nm GAAFET chips and making them commercially available by 2025. The company is already producing 3nm GAAFET chips. In February 2024, an announcement was registered from the Samsung foundry as per which the company is currently working on a highly sophisticated SF2 GAAFET process to compete with the future market for 2nm GAAFET chips.

Gate-All-Around FET (GAAFET) Market: Competitive Analysis

The global gate-all-around FET(GAAFET) market is led by players like:

  • Nvidia
  • NXP Semiconductors
  • GlobalFoundries
  • Intel Corporation
  • ASML Holding NV
  • Micron Technology
  • Taiwan Semiconductor Manufacturing Company (TSMC)
  • Texas Instruments
  • Applied Materials
  • Qualcomm
  • SK Hynix
  • IBM
  • Advanced Micro Devices (AMD)
  • Samsung Electronics
  • Broadcom Inc.

The global gate-all-around FET(GAAFET) market is segmented as follows:

By Application

  • Inverters & UPS
  • Consumer Electronics
  • Industrial Systems

By Type

  • 2nm
  • 3nm

By Region

  • North America
    • The U.S.
    • Canada
  • Europe
    • France 
    • The UK
    • Spain
    • Germany
    • Italy
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Southeast Asia
    • Rest of Asia Pacific
  • Latin America
    • Brazil
    • Mexico
    • Rest of Latin America
  • Middle East & Africa
    • GCC
    • South Africa
    • Rest of Middle East & Africa

Table Of Content

Methodology

FrequentlyAsked Questions

Gate-all-around field effect transistors (GAAFET) are being hailed as the ultimate complementary metal-oxide-semiconductor (CMOS) in the electrostatics sector by industry experts.

The global gate-all-around FET (GAAFET) market will be driven by the increasing sale of consumer electronics across the globe.

According to study, the global gate-all-around FET(GAAFET) market size was worth around USD 48.64 million in 2023 and is predicted to grow to around USD 433.1 million by 2032.

The CAGR value of gate-all-around FET(GAAFET) market is expected to be around 27.50% during 2024-2032.

The global gate-all-around FET (GAAFET) market is expected to be led by Asia-Pacific during the projection period.

The global gate-all-around FET(GAAFET) market is led by players like Nvidia, NXP Semiconductors, GlobalFoundries, Intel Corporation, ASML Holding NV, Micron Technology, Taiwan Semiconductor Manufacturing Company (TSMC), Texas Instruments, Applied Materials, Qualcomm, SK Hynix, IBM, Advanced Micro Devices (AMD), Samsung Electronics and Broadcom Inc.

The report explores crucial aspects of the gate-all-around FET(GAAFET) market including detailed discussion of existing growth factors and restraints while also browsing future growth opportunities and challenges that impact the market.

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