Global Silicon Carbide (SiC) Market Size, Share, Growth Analysis Report - Forecast 2034

Silicon Carbide (SiC) Market

Silicon Carbide (SiC) Market By Product Type (Black SiC, Green SiC), By Device Type (SiC Discrete Devices, SiC Bare Die, SiC Power Modules), By Wafer Size (2-inch, 4-inch, 6-inch & above), By Application (Power Devices, Optoelectronic Devices, RF Devices), By End-user (Automotive, Energy & Power, Aerospace & Defense, Electronics, Telecommunications), and By Region: Global and Regional Industry Overview, Market Intelligence, Comprehensive Analysis, Historical Data, and Forecasts 2025 - 2034

Category: Defense & Security Report Format : PDF Pages: 211 Report Code: ZMR-7674 Published Date: Jun-2025 Status : Published
Market Size in 2024 Market Forecast in 2034 CAGR (in %) Base Year
USD 4.28 Billion USD 110.42 Billion 34.5% 2024

Silicon Carbide (SiC) Market for Electric Vehicles Industry Prospective:

The global silicon carbide (SiC) market size was worth around USD 4.28 Billion in 2024 and is predicted to grow to around USD 110.42 Billion by 2034 with a compound annual growth rate (CAGR) of roughly 34.5% between 2025 and 2034. The report analyzes the global silicon carbide (SiC) market's drivers, restraints/challenges, and the effect they have on the demands during the projection period. In addition, the report explores emerging opportunities in the silicon carbide (SiC) industry.   

Global Silicon Carbide (SiC) Market size for Electric VehiclesRequest Free Sample

Silicon Carbide (SiC) Market for Electric Vehicles: Overview

A cutting-edge technology called silicon carbide (SiC) will take the role of silicon in many applications. When attempts were made to raise the effectiveness and range of such vehicles, while lowering the weight and cost of the complete vehicle and thereby improving the power density of control electronics, the notion of employing SiC for EVs emerged. Silicon carbide technologies that fulfill design requirements and significantly improve system performance and reliability over time can be used to improve power electronics for EVs.

Key Insights

  • As per the analysis shared by our research analyst, the global silicon carbide (SiC) market is estimated to grow annually at a CAGR of around 34.5% over the forecast period (2025-2034).
  • Regarding revenue, the global silicon carbide (SiC) market size was valued at around USD 4.28 Billion in 2024 and is projected to reach USD 110.42 Billion by 2034.
  • The silicon carbide (SiC) market is projected to grow at a significant rate due to Rising use in electric vehicles and power electronics due to high efficiency drives growth. Demand from renewable energy and 5G infrastructure further supports expansion.
  • Based on Product Type, the Black SiC segment is expected to lead the global market.
  • On the basis of Device Type, the SiC Discrete Devices segment is growing at a high rate and will continue to dominate the global market.
  • Based on the Wafer Size, the 2-inch segment is projected to swipe the largest market share.
  • By Application, the Power Devices segment is expected to dominate the global market.
  • In terms of End-user, the Automotive segment is anticipated to command the largest market share.
  • Based on region, Asia-Pacific is predicted to dominate the global market during the forecast period.

Global Silicon Carbide (SiC) Market size for Electric VehiclesRequest Free Sample

Silicon Carbide (SiC) Market for Electric Vehicles: Growth Drivers

The ability to operate at higher temperatures drives market growth

Compared to typical silicon-based devices, SiC power devices can function at significantly greater temperatures, negating the need for cooling mechanisms and large heat-sink materials. Thermal management of silicon power devices like insulated gate bipolar transistors (IGBTs), which have maximum operating temperature and acceptable junction temperature restrictions, becomes more difficult when power levels grow, like in the case of traction inverters that power the motors in electric vehicles (EVs). Specifically in a traction inverter where power levels can exceed 100 kW, this difficulty necessitates the introduction of cooling components in powertrain systems, such as large copper blocks with water jackets. These cooling parts enlarge, weigh down, and raise the price of the car. SiC, on the other hand, has a substantially greater permissible junction temperature range of 175°C and above. SiC has a two to three times better heat conductivity than silicon as well. Thus, this is expected to propel the silicon carbide market for electric vehicles expansion over the forecast period.

Silicon Carbide (SiC) Market for Electric Vehicles: Restraints

High costs hinder market growth

Manufacturing SiC-based power electronics and components often cost more than their conventional silicon-based equivalents. SiC technology adoption by EV manufacturers may be hampered by high upfront costs. According to secondary analysis, retail prices for 100-A discrete SiC MOSFETs at 650 V and 1,200 V in September 2021 were almost precise multiples of 3 compared to the cost of Si IGBTs. The SiC device occupies 3 to 4 less space on a machined wafer, however, this still holds. Thus, the aforementioned facts hamper the silicon carbide market for electric vehicles expansion over the forecast period.

Silicon Carbide (SiC) Market for Electric Vehicles: Opportunities

The growing product launch offers a lucrative opportunity for market growth

The growing product launch is expected to offer a lucrative opportunity for silicon carbide market for electric vehicles growth during the forecast period. For instance, in June 2023, to improve power density and efficiency in on-board charging (OBC) and DC-DC applications, Infineon Technologies introduced 1200 V CoolSiC MOSFETs in TO263-7 for automotive applications. Moreover, in March 2023, the first inverter made with silicon carbide (SiC) semiconductors was created, as reported by DENSO CORPORATION, a top supplier to the mobility industry. The new Lexus RZ, the automaker's first specifically designed battery electric vehicle (BEV) model, will feature this inverter, which is integrated inside the eAxle, an electric drive module created by BluE Nexus Corporation.

Silicon Carbide (SiC) Market for Electric Vehicles: Challenges

Limited production capacity and lack of standardization pose a major challenge to market growth

SiC wafer and device production capacity is still limited, especially for larger-diameter wafers. This restriction may result in a lack of supplies and more volatile prices. Additionally, since the technology is still developing, creating industry standards for SiC-based devices might be difficult. Interoperability might be hampered and the market could become unpredictable due to a lack of standards. Thus, acting as a major challenge for the market expansion over the forecast period.

Silicon Carbide (SiC) Market for Electric Vehicles: Segmentation

The global Silicon Carbide (SiC) Market for Electric Vehicles is segmented based on application, vehicle type, propulsion type, product, voltage, and region.

Based on the application, the global market is bifurcated into Traction Inverter, On-Board Charger (OBC), and DC-DC Converter. The Traction Inverter segment is expected to dominate the market during the forecast period. The traction inverter emerges as a crucial area for innovation as the automobile industry places an increasing emphasis on efficiency and sustainability. To solve critical issues in the EV ecosystem, SiC-equipped traction inverters offer increased energy efficiency, longer driving ranges, and optimum battery use. Thereby, driving the segment growth.

Based on the vehicle type, the global Silicon Carbide industry for Electric Vehicles is bifurcated into Passenger Vehicles and Commercial Vehicles. The Passenger Vehicles segment is expected to capture the largest market share over the forecast period. As passenger electric cars surpass commercial vehicles in terms of sales and manufacturing, this trend is anticipated to continue. Cost-effectiveness and government incentives are driving up consumer EV adoption, which is a factor in the market domination of passenger EVs.

Based on the propulsion type, the global Silicon Carbide Market for Electric Vehicles is bifurcated into Battery Electric Vehicles (BEVs), Hybrid Electric Vehicles (HEVs) and Plug-in Hybrid Electric Vehicles (PHEVs).

Based on the product, the global industry is bifurcated into SiC MOSFETs and SiC Diodes.

Based on the voltage, the global Silicon Carbide (SiC) Market for Electric Vehicles is bifurcated into Up to 800V and more than 800V. The Up to 800V segment is expected to dominate the market over the forecast period. This voltage range enables EV makers to create lightweight, compact power electronics systems that improve the performance and range of the vehicles. Additionally, it makes SiC components easier to integrate effectively, lowering switching losses and raising overall efficiency.

Silicon Carbide (SiC) Market: Report Scope

Report Attributes Report Details
Report Name Silicon Carbide (SiC) Market
Market Size in 2024 USD 4.28 Billion
Market Forecast in 2034 USD 110.42 Billion
Growth Rate CAGR of 34.5%
Number of Pages 211
Key Companies Covered Mitsubishi Electric, Wolfspeed Inc., STMicroelectronics, Onsemi, GeneSiC Semiconductor, Infineon Technologies, Robert Bosch GmbH, ROHM CO. LTD., Microchip Technology Inc., Alpha and Omega Semiconductor, Toshiba Corporation, Littelfuse Inc, Fuji Electric Co. Ltd., WeEn Semiconductors and Solitron Devices Inc., and others., and others.
Segments Covered By Product Type, By Device Type, By Wafer Size, By Application, By End-user, and By Region
Regions Covered North America, Europe, Asia Pacific (APAC), Latin America, The Middle East and Africa (MEA)
Base Year 2024
Historical Year 2020 to 2024
Forecast Year 2025 to 2034
Customization Scope Avail customized purchase options to meet your exact research needs. Request For Customization
 

Silicon Carbide Market for Electric Vehicles: Regional Analysis

Asia Pacific is expected to dominate the market during the forecast period

The Asia Pacific is expected to dominate the global silicon carbide market for electric vehicles over the forecast period because of the electric vehicle industry's rapid expansion, which has been fueled by government regulations, environmental concerns, and technical developments. Government funding, research spending, and collaborations with SiC producers have sped up the creation and use of SiC technology within the Chinese electric vehicle ecosystem. China has a competitive edge in the manufacture of SiC due to its existing supply chain infrastructure and strong manufacturing capabilities, which also increase cost-efficiency and scalability. On the other hand, Europe holds a substantial market share over the forecast period. The region's market growth is attributed to the growing adoption of EVs as well as rising government initiatives such as tax reimbursement, subsidy, and others.

Silicon Carbide (SiC) Market: Competitive Analysis

The report provides a company market share analysis to give a broader overview of the key market players. In addition, the report also covers key strategic developments of the market, including acquisitions & mergers, new product launches, agreements, partnerships, collaborations & joint ventures, research & development, and regional expansion of major participants involved in the silicon carbide (SiC) market on a global and regional basis.

The global silicon carbide (SiC) market is dominated by players like:

  • Mitsubishi Electric
  • Wolfspeed Inc.
  • STMicroelectronics
  • Onsemi
  • GeneSiC Semiconductor
  • Infineon Technologies
  • Robert Bosch GmbH
  • ROHM CO. LTD.
  • Microchip Technology Inc.
  • Alpha and Omega Semiconductor
  • Toshiba Corporation
  • Littelfuse Inc
  • Fuji Electric Co. Ltd.
  • WeEn Semiconductors and Solitron Devices Inc.
  • and others.

The global silicon carbide (SiC) market is segmented as follows;

By Product Type

  • Black SiC
  • Green SiC

By Device Type

  • SiC Discrete Devices
  • SiC Bare Die
  • SiC Power Modules

By Wafer Size

  • 2-inch
  • 4-inch
  • 6-inch & above

By Application

  • Power Devices
  • Optoelectronic Devices
  • RF Devices

By End-user

  • Automotive
  • Energy & Power
  • Aerospace & Defense
  • Electronics
  • Telecommunications

By Region

  • North America
    • The U.S.
    • Canada
    • Mexico
  • Europe
    • France
    • The UK
    • Spain
    • Germany
    • Italy
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • Australia
    • South Korea
    • Rest of Asia Pacific
  • The Middle East & Africa
    • Saudi Arabia
    • UAE
    • Egypt
    • Kuwait
    • South Africa
    • Rest of the Middle East & Africa
  • Latin America
    • Brazil
    • Argentina
    • Rest of Latin America

Table Of Content

Methodology

FrequentlyAsked Questions

A cutting-edge technology called silicon carbide (SiC) will take the role of silicon in many applications. When attempts were made to raise the effectiveness and range of such vehicles, while lowering the weight and cost of the complete vehicle and thereby improving the power density of control electronics, the notion of employing SiC for EVs emerged. Silicon carbide technologies that fulfill design requirements and significantly improve system performance and reliability over time can be used to improve power electronics for EVs.

The global silicon carbide (SiC) market is expected to grow due to Rising use in electric vehicles and power electronics due to high efficiency drives growth. Demand from renewable energy and 5G infrastructure further supports expansion.

According to a study, the global silicon carbide (SiC) market size was worth around USD 4.28 Billion in 2024 and is expected to reach USD 110.42 Billion by 2034.

The global silicon carbide (SiC) market is expected to grow at a CAGR of 34.5% during the forecast period.

Asia-Pacific is expected to dominate the silicon carbide (SiC) market over the forecast period.

Leading players in the global silicon carbide (SiC) market include Mitsubishi Electric, Wolfspeed Inc., STMicroelectronics, Onsemi, GeneSiC Semiconductor, Infineon Technologies, Robert Bosch GmbH, ROHM CO. LTD., Microchip Technology Inc., Alpha and Omega Semiconductor, Toshiba Corporation, Littelfuse Inc, Fuji Electric Co. Ltd., WeEn Semiconductors and Solitron Devices Inc., and others., among others.

The report explores crucial aspects of the silicon carbide (SiC) market, including a detailed discussion of existing growth factors and restraints, while also examining future growth opportunities and challenges that impact the market.

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