Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Size, Share, Analysis, Trends, Growth Report, 2023 - 2030

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market By Application (Community Antenna Television (CATV) & Wired Broadband, Telecommunication, Aerospace, Defense & SATCOM, Consumer Devices, Automotive, and Others), By Frequency Band (Ultra-High Frequency (UHF) and Very High Frequency (VHF)), By Device (Power Amplifier, Filter & Duplexer, Low Noise Amplifier, and Others), and By Region - Global and Regional Industry Overview, Market Intelligence, Comprehensive Analysis, Historical Data, and Forecasts 2023 – 2030

Category: Semiconductor & Electronics Report Format : PDF Pages: 222 Report Code: ZMR-7360 Published Date: Jul-2023 Status : Published
Market Size in 2022 Market Forecast in 2030 CAGR (in %) Base Year
USD 482 Million USD 948 Million 8.76% 2022

Gallium Arsenide (GaAs) Radio Frequency Market

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Industry Perspective:    

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market size was worth around USD 482 million in 2022 and is predicted to grow to around USD 948 million by 2030 with a compound annual growth rate (CAGR) of roughly 8.76% between 2023 and 2030.

Global Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market SizeRequest Free Sample

The report delves deeper into several crucial aspects of the global gallium arsenide (GaAs) radio frequency (RF) semiconductor market. It includes a detailed discussion of existing growth factors and restraints. Future growth opportunities and challenges that impact the gallium arsenide (GaAs) radio frequency (RF) semiconductor industry are comprehensively addressed in the report.

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Overview

Gallium arsenide with chemical formula (GaAs) is a type of semiconductor compound that is used in the production of field-effect transistors (FETs), diodes, and integrated circuits (ICs). They are responsible for charging carriers which, in most cases, are electrons. GaAs have become an essential component in the modern technology-driven world since they assist in manufacturing and producing ultra-high radio frequencies. They have also shown applications in fast electronic switching applications. Devices made of GaAs generate less noise when compared to other forms of semiconductor components which become key criteria in procedures such as weak-signal amplification. GaAs is considered III-V direct band gap semiconductor showing a zinc-blende crystal structure. III-V represents an alloy that contains elements from groups V and III in the periodic table.

Key Insights:

  • As per the analysis shared by our research analyst, the global gallium arsenide (GaAs) radio frequency (RF) semiconductor market is estimated to grow annually at a CAGR of around 8.76% over the forecast period (2023-2030)
  • In terms of revenue, the global gallium arsenide (GaAs) radio frequency (RF) semiconductor market size was valued at around USD 482 million in 2022 and is predicted to grow to around USD 948 million, by 2030.
  • The gallium arsenide radio frequency semiconductor market is projected to grow at a significant rate due to the growing demand for sustainable packaging
  • Based on application segmentation, automotive was predicted to show maximum market share in the year 2022
  • Based on device segmentation, filter & duplexer was the leading segment in 2022
  • On the basis of region, Asia-Pacific was the leading revenue generator in 2022

Global Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market SizeRequest Free Sample

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Growth Drivers

Advantages of GaAs RF semiconductor over silicon to drive market growth

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market is projected to grow owing to the advantages offered by GaAs RF semiconductors over silicon which is one of the most common materials used in the manufacturing of semiconductors. The former compound shows higher electron mobility and saturated electron velocity. This means that GaAs RF semiconductors can function at frequencies above 250 GHz. Moreover, they are resistant to overheating and create less noise in electronic circuits when compared to silicon-based devices.

There is a growing market for low noise amplifiers (LNA) resulting from the growing penetration of 5G technology along with rising applications of Internet of Things (IoT) technology. LNA devices can efficiently amplify low or extremely weak signals without impacting the quality of the signal. In December 2022, Reliance Industries, one of India’s leading conglomerates, with a presence in the Information Technology (IT) sector announced its plan to invest nearly INR 2 lakh crore in the Indian market for rolling out 5G network architecture by the end of 2023. Similarly, in February 2023, Ericsson, a Sweden-based technology giant, has already increased its Indian investments in the manufacturing of 5G equipment. As estimated by Business Standard, India’s list of 5G subscribers is expected to grow by 2000%in the coming 5 years.

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Restraints

High production cost to restrict market expansion

The gallium arsenide radio frequency semiconductor industry may not reach its true potential due to the high cost of GaAs RF semiconductors production which is mainly attributed to the single crystal GaAs substrate. When compared to more traditionally used silicone, companies operating in the sector may be unable to justify the high expenses associated with the production and use of GaAs. For instance, research indicates that a 6-inch wafer made of gallium arsenide may cost more than USD 210. Whereas, if silicone is used to produce a 200-millimeter wafer, the cost will be as low as USD 40. Unless the production cost of using GaAs RF semiconductors is reduced, it will be difficult for emerging economies to adopt products made of this technology.

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Opportunities

Growing applications of GaAs semiconductors in space to provide growth opportunities

GaAs semiconductors have been extensively researched and applied in several space-related activities due to the high efficiency of the compound along with its strong resistance to radiation. Using GaAs RF semiconductors has allowed the space exploration sector to invest in higher and more extensive research. Moreover, there has been a steady rise in space tourism with projects being undertaken by private companies. In July 2023, a private space exploration company, Virgin Galactic, completed its first space flight which included participants that paid for flight tickets. The company plans to send several other flights into orbit during the next few years.     

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Challenges

Intense competition from silicon-based products to challenge market growth

The global gallium arsenide radio frequency semiconductor market players are expected to face challenges owing to the intense competition from silicon-based counterparts. Due to the stable structure of silicon, it remains a highly popular raw material and currently, many economies, including developed and developing, use silicon semiconductors extensively. For instance, in May 2023, the US and Indian governments signed a memorandum of Understanding (MoU) as the countries will focus on building a robust supply chain for silicon-based semiconductors. During the forecast period, the silicon carbide semiconductor market is expected to grow at a CAGR of 23.95%.

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Segmentation

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market is segmented based on application, frequency brand, device, and region.

Based on application, the global market segments are community antenna television (CATV) & wired broadband, telecommunication, aerospace, defense & SATCOM, consumer devices, automotive, and others. The highest CAGR was observed in the automotive segment in 2022 and will continue to grow during the forecast period mainly due to increased automobile sales and higher demand for advanced features in automobiles. Moreover, the growing use of GaAs semiconductors for the production of monolithic microwave integrated circuits could assist in higher growth in communication systems. The current investment by the US Department of Defense worth more than USD 500 million to prototype a 5G-to-Next-G smart warehouse system is one such instance.

Based on frequency band, the gallium arsenide radio frequency semiconductor industry is segmented into ultra-high frequency (UHF) and very high frequency (VHF). Although GaAs RF semiconductors work with both types of frequency bands, their current largest application is the UHF segment. They are used for extensive wireless communication systems including wireless microphones, walkie-talkies, and UHF radios. They are also used in RF identification (RFID) systems. The extended frequency range of gate length GaAs RF semiconductors is between 20 GHz to 40 GHz and more.

Based on device, the gallium arsenide radio frequency semiconductor industry is segmented into power amplifier, filter & duplexer, low noise amplifier, and others. Gallium arsenide radio frequency semiconductors are most extensively used to manufacture filters and duplexers. In the former type of devices, the GaAs RF semiconductor only allows the passing of the required frequencies while the rest are blocked or filtered. In the duplexer segment, these semiconductors play a crucial role in establishing cellular networks as they can work with a combination of frequencies. The current global telecommunication market value is more than USD 1800 billion.

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Report Scope

Report Attributes Report Details
Report Name Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market Research Report
Market Size in 2022 USD 482 Million
Market Forecast in 2030 USD 948 Million
Growth Rate CAGR of 8.76%
Number of Pages 222
Key Companies Covered Skyworks Solutions, WIN Semiconductors Corp., NXP Semiconductors, Qorvo, RF Micro Devices (RFMD), MACOM Technology Solutions Holdings Inc., Broadcom Inc., Murata Manufacturing Co. Ltd., Analog Devices Inc., TriQuint Semiconductor, Mitsubishi Electric Corporation, NEC Corporation, Microchip Technology Inc., Texas Instruments Inc., OMMIC S.A.S., ON Semiconductor, Cree Inc., Sumitomo Electric Industries Ltd., Maxim Integrated, United Monolithic Semiconductors, Keysight Technologies, and Infineon Technologies AG among others.
Segments Covered By Application, By Frequency Band, By Device, and By Region
Regions Covered North America, Europe, Asia Pacific (APAC), Latin America, Middle East, and Africa (MEA)
Base Year 2022
Historical Year 2017 to 2021
Forecast Year 2023 - 2030
Customization Scope Avail customized purchase options to meet your exact research needs. Request For Customization

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Regional Analysis

Asia-Pacific to register the highest growth rate during the forecast period

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market will be dominated by Asia-Pacific during the forecast period mainly led by the rising investment toward 5G network infrastructure and long-term evolution (LTE) systems in networking. Countries such as China, India, South Korea, and Japan are currently working toward improving their technological infrastructure by undertaking strategic partnerships with regional players.

In May 2022, Japan announced that it will be investing in India where resources will be used to build 5G infrastructure and smart cities. Moreover, a rise in space exploration activities could further regional CAGR. Other factors such as surging applications in defense-based systems and growth in the regional automotive sector are likely to act as key growth contributors. In North America, the growth rate is projected to be steady mainly driven by the rising adoption of smart technology and IoT in consumer devices such as televisions and smartphones. By 2028, the US IoT market will reach over 297.5 billion as per research conclusions.

Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Market: Competitive Analysis

The global gallium arsenide radio frequency semiconductor market is led by players like:

  • Skyworks Solutions
  • WIN Semiconductors Corp.
  • NXP Semiconductors
  • Qorvo
  • RF Micro Devices (RFMD)
  • MACOM Technology Solutions Holdings Inc.
  • Broadcom Inc.
  • Murata Manufacturing Co. Ltd.
  • Analog Devices Inc.
  • TriQuint Semiconductor
  • Mitsubishi Electric Corporation
  • NEC Corporation
  • Microchip Technology Inc.
  • Texas Instruments Inc.
  • OMMIC S.A.S.
  • ON Semiconductor
  • Cree Inc.
  • Sumitomo Electric Industries Ltd.
  • Maxim Integrated
  • United Monolithic Semiconductors
  • Keysight Technologies
  • Infineon Technologies AG 

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market is segmented as follows:

By Application

  • Community Antenna Television (CATV) & Wired Broadband
  • Telecommunication
  • Aerospace
  • Defense & SATCOM
  • Consumer Devices
  • Automotive
  • Others

By Frequency Band

  • Ultra-High Frequency (UHF)
  • Very High Frequency (VHF)

By Device

  • Power Amplifier
  • Filter & Duplexer
  • Low Noise Amplifier
  • Others

By Region

  • North America
    • The U.S.
    • Canada
  • Europe
    • France
    • The UK
    • Spain
    • Germany
    • Italy
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Southeast Asia
    • Rest of Asia Pacific
  • Latin America
    • Brazil
    • Mexico
    • Rest of Latin America
  • Middle East & Africa
    • GCC
    • South Africa
    • Rest of Middle East & Africa

Table Of Content

Methodology

FrequentlyAsked Questions

Gallium arsenide with chemical formula (GaAs) is a type of semiconductor compound that is used in the production of field-effect transistors (FETs), diodes, and integrated circuits (ICs).

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market is projected to grow owing to the advantages offered by GaAs RF semiconductors over silicon which is one of the most common materials used in the manufacturing of semiconductors.

According to study, the global gallium arsenide (GaAs) radio frequency (RF) semiconductor market size was worth around USD 482 million in 2022 and is predicted to grow to around USD 948 million by 2030.

The CAGR value of gallium arsenide (GaAs) radio frequency (RF) semiconductor market is expected to be around 8.76% during 2023-2030.

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market will be dominated by Asia-Pacific during the forecast period mainly led by the rising investment toward 5G network infrastructure and long-term evolution (LTE) systems in networking.

The global gallium arsenide (GaAs) radio frequency (RF) semiconductor market is led by players like Skyworks Solutions, WIN Semiconductors Corp., NXP Semiconductors, Qorvo, RF Micro Devices (RFMD), MACOM Technology Solutions Holdings, Inc., Broadcom Inc., Murata Manufacturing Co., Ltd., Analog Devices Inc., TriQuint Semiconductor, Mitsubishi Electric Corporation, NEC Corporation, Microchip Technology Inc., Texas Instruments Inc., OMMIC S.A.S., ON Semiconductor, Cree, Inc., Sumitomo Electric Industries, Ltd., Maxim Integrated, United Monolithic Semiconductors, Keysight Technologies, and Infineon Technologies AG among others.

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